Function : Power MOSFET 30 Amps, 500 Volts, RDS(on)= 150 m ohm / N−Channel TO−264
Maker : ON Semiconductor
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Motorola datasheet : http://u.dianyuan.com/bbs/u/59/1627101196048315.pdf
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• Idss and Vds(on)Specified at Elevated Temperature
Datasheet PDF Download :
Others datasheet of same file : MTY30N50E,TY30N50E