Part Number : MMZ09312BT1
Function : Heterojunction Bipolar Transistor Technology (InGaP HBT)
Maker : Freescale Semiconductor

Pinouts :
MMZ09312BT1 datasheet

Description :

The MMZ09312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage infemtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package.

Datasheet PDF Download :
MMZ09312BT1 pdf

Others datasheet of same file : MMZ09312BT1
2015/01/28 13:52 2015/01/28 13:52

This Blog provides Datasheets and information for electronic components and semiconductors