Part Number : K3567

Function : 600V, 3.5A, N-channel, MOSFET

Package : TO-220 Type

Maker : Toshiba

Image :
K3567 datasheet

Description :

Silicon N Channel MOS Type Field Effect Transistor

Features : 

1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3.5 A

4. Drain Power Dissipation : Pd = 35 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C



Pinout


Datasheet PDF Download :
K3567 pdf

Others datasheet of same file : 2SK3567

 

2021/09/27 16:57 2021/09/27 16:57

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