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Part Number : K3567
Function : Silicon N Channel MOS Type / TOSHIBA Field Effect Transistor
Maker : Toshiba

Pinouts :
K3567 datasheet

Description :

• Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)

• High forward transfer admittance: |Yfs| = 2.5 S (typ.)

• Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Datasheet PDF Download :
K3567 pdf

Others datasheet of same file : 2SK3567,K3567
2015/01/28 13:52 2015/01/28 13:52

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