Part Number : K3142
Function : 30V, 60A, Silicon N Channel MOSFET, Transistor
Package : TO-220 Type
Maker : Hitachi , Renesas Electronics
Image :
Description :
1. Low on-resistance RDS(on)=4mΩ typ.
2. Low drive current
3. 4V gate drive device can be driven from 5V source
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 60 A
4. Channel dissipation : Pch = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
High Speed Power Switching
Datasheet PDF Download :
Others datasheet of same file : 2SK3142