Part Number : K3142

Function : 30V, 60A, Silicon N Channel MOSFET, Transistor 

Package : TO-220 Type 

Maker : Hitachi , Renesas Electronics

Image :
K3142 datasheet

Description :

1. Low on-resistance RDS(on)=4mΩ typ.

2. Low drive current

3. 4V gate drive device can be driven from 5V source

Pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 60 A

4. Channel dissipation : Pch = 35 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C


Applications :

High Speed Power Switching

Datasheet PDF Download :
K3142 pdf

Others datasheet of same file : 2SK3142

2021/05/14 14:20 2021/05/14 14:20

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