Part Number : K2699

Function :  600V, 12A, MOSFET, Transistor

Package : TO-3PN Type

Maker : Toshiba

Image :


K2699 datasheet

Description :

1. Low drain−source ON resistance : RDS (ON)= 0.5 Ω(typ.),
2. High forward transfer admittance : |Yfs| = 11 S (typ.),
3. Low leakage current : IDSS= 100 μA (max) (VDS= 600 V),
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 12 A

4. Drain Power Dissipation : Pd = 150 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C


Applications :

Chopper Regulator, DC−DC Converter and Motor Drive 

Datasheet PDF Download :
K2699 pdf

Others datasheet of same file : 2SK2699

2021/10/22 19:37 2021/10/22 19:37

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