Part Number : K10A60D
Function : 600V, Field Effect Transistor Silicon N Channel MOSFET
Package : TO-220 Type
Maker : Toshiba
Image :
Description :
1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 10 A
4. Avalanche energy : Ear = 4.5 mJ
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications : Switching Regulator
Datasheet PDF Download :
Others datasheet of same file : K10A60, K10A600, TK10A60D