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Part Number : K10A60D

Function : TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications

Maker : Toshiba

Pinouts :
K10A60D datasheet

Description :

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)

• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 


Datasheet PDF Download :
K10A60D pdf

Others datasheet of same file : K10A60, K10A60D, TK10A60D
2015/01/28 13:52 2015/01/28 13:52

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