Function : HEXFET Power MOSFET
Maker : International Rectifier
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on
resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Datasheet PDF Download :
Others datasheet of same file : FR4104,FR4104PBF,FU4104,FU4104PBF,IRFR4104PBF