Part Number : IRFD1Z0

Function : 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFET

Package : HEXDIP Type

Maker : Intersil

Pinouts :
IRFD1Z0 datasheet

Description :

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits. Formerly developmental type TA17451.

• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

Datasheet PDF Download :
IRFD1Z0 pdf

Others datasheet of same file : IRFD1ZO, IRFD1Z1, IRFD1Z2, IRFD1Z3
2021/06/14 16:15 2021/06/14 16:15