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Part Number : IRF630B
Function : 200V N-Channel MOSFET
Maker : Fairchild Semiconductor

Pinouts :
IRF630B datasheet

Description :

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Datasheet PDF Download :
IRF630B pdf

Others datasheet of same file : IRF630B,IRFS630B
2015/01/28 13:52 2015/01/28 13:52

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