Part Number : IDW10G65C5

Function : 650V SiC, Schottky Diode / 5th Generation thinQ

Package : TO-247 Type

Maker : Infineon Technologies

Pinouts :
IDW10G65C5 datasheet

Description :

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.


1. Revolutionary semiconductor material - Silicon Carbide

2. Benchmark switching behavior

3. No reverse recovery/ No forward recovery

4. Temperature independent switching behavior


5. High surge current capability

Datasheet PDF Download :
IDW10G65C5 pdf

Others datasheet of same file :

IDW10G65C, IDW10G65C5XKSA1, D1065C5

2021/07/22 16:42 2021/07/22 16:42