Part Number : H11AG1M
Maker : Fairchild Semiconductor

Pinouts :
H11AG1M datasheet

Description :

The H11AG1M device consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable  electronics isolation applications.

Datasheet PDF Download :
H11AG1M pdf

Others datasheet of same file : H11AG1,H11AG1M,H11AG1SM,H11AG1SR2M,H11AG1SR2VM
2015/01/28 13:52 2015/01/28 13:52

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