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Part Number : GB6B60KD

Function : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Maker : International Rectifier

Pinouts :
GB6B60KD datasheet

Description :

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.


Datasheet PDF Download :
GB6B60KD pdf

Others datasheet of same file : GB6B60KD, GS6B60KD, GSL6B60KD, IRGB6B60KD, IRGS6B60KD
2015/01/28 13:52 2015/01/28 13:52

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