Function : Digital FET, Dual N-Channel
Maker : Fairchild Semiconductor
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.Thisdevice has been designed especially for low voltage applications as a replacement for digital transistors in load switchingapplications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Datasheet PDF Download :
Others datasheet of same file : FDC6303N