Part Number : BSS123
Function : N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker : Fairchild Semiconductor
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These products
have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and
other switching applications.
- 0.17 A, 100 V. Rds(on) = 6W @ Vgs= 10 V
Rds(on) = 10W @ Vgs= 4.5 V
- High density cell design for extremely lowRDS(ON)
- Rugged and Reliable
- Compact industry standard SOT-23 surface mount package
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