Part Number : BSS123
Function : N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker : Fairchild Semiconductor

Pinouts :
BSS123 datasheet

Description : General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These products
have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and
other switching applications.

- 0.17 A, 100 V. Rds(on) = 6W @ Vgs= 10 V
Rds(on) = 10W @ Vgs= 4.5 V
- High density cell design for extremely lowRDS(ON)
- Rugged and Reliable
- Compact industry standard SOT-23 surface mount package
Datasheet PDF Download :
BSS123 pdf

Others datasheet of same file : BSS123
2015/01/28 13:52 2015/01/28 13:52

This Blog provides Datasheets and information for electronic components and semiconductors