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Part Number : BLH3355
Function : NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Maker : Unspecified

Pinouts :
BLH3355 datasheet

Description :

Planar type 
Electrodes: Aluminum alloy
Backside metal: Au alloy

Chip size: 370µm ×370µm 
Chip thickness: 220±20µm.
Pad size: φ100µm

ABSOLUTE MAXIMUM RATING

VCBO  Collector to Base Voltage  : 20  V
VCEO  Collector to Emitter Voltage  : 12  V
VEBO  Emitter to Base Voltage  : 3.0  V
IC  Collector Current  : 100  mA
Ptot  Total Power Dissipation : 200  mW
Tj  Junction Temperature  : 150  °C
Tstg  Storage Temperature : −65 to +150  °C


Datasheet PDF Download :
BLH3355 pdf

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2015/01/28 13:52 2015/01/28 13:52

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