Part Number : 30J124
Function : Discrete IGBTs
Maker : Toshiba
Description : Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
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Others datasheet of same file : GT60M303A