Part Number : 2SK2662

Function : 500V, 5A, Silicon N Channel MOSFET

Package : TO-220 Type

Maker : Toshiba

Pinouts :
2SK2662 datasheet

Description :

1. Low drain−source ON resistance  : RDS (ON) = 1.35 Ω(typ.)

2. High forward transfer admittance  : |Yfs | = 4.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 500 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 5 A

4. Channel temperature : Tch =  150 °C

 

5. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

DC−DC Converter, Relay Drive and Motor Drive 


Datasheet PDF Download :
2SK2662 pdf

Others datasheet of same file : K2662
2021/09/14 21:03 2021/09/14 21:03

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