Part Number : 2SK2611

Function : 900V, 9A, MOSFET, Transistor

Maker : Toshiba

Pinouts :
2SK2611 datasheet

Description :

Silicon N Channel MOSFET

Features : 

1. Low drain−source ON-resistance  : RDS (ON)= 1.2 Ω(typ.)

2. High forward transfer admittance  : |Yfs| =7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 9 A

4. Channel temperature : Tch =  150 °C

5. Storage temperature : Tstg = -55 to +150 °C



Applications :

1. DC−DC Converter, Relay Drive and Motor Drive 


Datasheet PDF Download :
2SK2611 pdf

Others datasheet of same file : K2611
2021/09/15 10:19 2021/09/15 10:19

Posted