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Part Number : 2SK2610

Function : Silicon N Channel MOS Type

Maker : Toshiba

Pinouts :
2SK2610 datasheet

Description :

* Low drain−source ON resistance  : RDS (ON)= 2.3 Ω(typ.)


* High forward transfer admittance  : |Yfs|=4.4 S (typ.)


* Low leakage current  : IDSS= 100 µA (max) (VDS= 720 V)


* Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)
 


Datasheet PDF Download :
2SK2610 pdf

Others datasheet of same file : 2SK2610, K2610
2015/01/28 13:52 2015/01/28 13:52

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