Part Number : 1N5818

Function : 30V, 1.0 A Schottky Rectifier, Diode

Package : Axial Lead Type

Maker : ON Semiconductor

Pinouts :
1N5818 datasheet

Description :

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.


Features

1. Extremely Low VF

2. Low Stored Charge, Majority Carrier Conduction

3. Low Power Loss/High Efficiency

4. These are Pb−Free Devices*

 

Mechanical Characteristics:

1. Case: Epoxy, Molded

2. Weight: 0.4 Gram (Approximately)

3. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

4. Lead Temperature for Soldering Purposes

 

Official Site : http://www.onsemi.com/PowerSolutions/product.do?id=1N5818


Datasheet PDF Download :
1N5818 pdf

Others datasheet of same file : 1N5817, IN5818, 1N5819
2021/09/25 15:30 2021/09/25 15:30

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