Function : 1.0 A Schottky Rectifier / Axial Lead Rectifiers
Maker : ON Semiconductor
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Official Site : http://www.onsemi.com/PowerSolutions/product.do?id=1N5818
Datasheet PDF Download :
Others datasheet of same file : 1N5817,1N5818,1N5819